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FDMC7692 N-Channel Power Trench(R) MOSFET
July 2009
FDMC7692
N-Channel Power Trench(R) MOSFET
30 V, 13.3 A, 8.5 m:
Features
Max rDS(on) = 8.5 m: at VGS = 10 V, ID = 13.3 A Max rDS(on) = 11.5 m: at VGS = 4.5 V, ID = 10.6 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench(R) process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application
DC - DC Buck Converters Notebook battery power management Load switch in Notebook
Top Pin 1 S S S G
Bottom
D D D D D
5 6 7 8
4 3 2 1
G S S S
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 C Operating and Storage Junction Temperature Range (Note 3) (Note 1a) TC = 25 C TA = 25 C (Note 1a) Ratings 30 20 16 13.3 40 58 2.3 -55 to +150 mJ W C A Units V V
Thermal Characteristics
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 53 C/W
Package Marking and Ordering Information
Device Marking FDMC7692 Device FDMC7692 Package MLP 3.3x3.3 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units
(c)2009 Fairchild Semiconductor Corporation FDMC7692 Rev.B
1
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FDMC7692 N-Channel Power Trench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 PA, VGS = 0 V ID = 250 PA, referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 125 C VGS = 20 V, VDS = 0 V 30 16 1 250 100 V mV/C PA nA
On Characteristics
VGS(th) 'VGS(th) 'TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 PA ID = 250 PA, referenced to 25 C VGS = 10 V, ID = 13.3 A VGS = 4.5 V, ID = 10.6 A VGS = 10 V, ID = 13.3 A, TJ = 125 C VDD = 5 V, ID = 13.3 A 1.2 1.9 -6 7.2 9.5 9.5 60 8.5 11.5 12.0 S m: 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 1260 480 65 0.9 1680 635 100 pF pF pF :
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V ID = 13.3 A VDD = 15 V, ID = 13.3 A, VGS = 10 V, RGEN = 6 : 9 4 21 3 21 10 5 3 18 10 33 10 29 20 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 13.3 A VGS = 0 V, IS = 1.9 A IF = 13.3 A, di/dt = 100 A/Ps (Note 2) (Note 2) 0.86 0.75 24 7 1.2 1.2 38 14 V ns nC
NOTES: 1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper b.125 C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %. 3. EAS of 58 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 10.8 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4 A.
(c)2009 Fairchild Semiconductor Corporation FDMC7692 Rev.B
2
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FDMC7692 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
40
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V ID, DRAIN CURRENT (A)
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX
4.0 3.5
VGS = 3.5 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX
30
VGS = 6 V VGS = 4.5 V VGS = 4 V
3.0 2.5 2.0 1.5 1.0
VGS = 6 V VGS = 10 V VGS = 4 V VGS = 4.5 V
20
VGS = 3.5 V
10
VGS = 3 V
0 0 1 2 3 4
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.5 0 10 20
ID, DRAIN CURRENT (A)
30
40
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
40
SOURCE ON-RESISTANCE (m:)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.2 1.0 0.8
ID = 13.3 A VGS = 10 V
ID = 13.3 A
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX
30
rDS(on), DRAIN TO
20
TJ = 125 oC
10
TJ = 25 oC
0.6 -75
0
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
40
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
60
VGS = 0 V
10
ID, DRAIN CURRENT (A)
30
VDS = 5 V TJ = 150 oC TJ = 25 oC
1
TJ = 150 oC
20
TJ = 25 oC
0.1
10
TJ = -55 oC
0.01
TJ = -55 oC
0 1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2009 Fairchild Semiconductor Corporation FDMC7692 Rev.B
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FDMC7692 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 13.3 A
CAPACITANCE (pF)
3000
Ciss
8
VDD = 10 V
1000
Coss
6
VDD = 15 V VDD = 20 V
4 2
100
f = 1 MHz VGS = 0 V
Crss
0 0 3 6 9 12 15 18 21
Qg, GATE CHARGE (nC)
20 0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
50
ID, DRAIN CURRENT (A)
20
IAS, AVALANCHE CURRENT (A)
10
TJ = 25 oC TJ = 100 oC TJ = 125 oC
40 30 20
VGS = 4.5 V
VGS = 10 V
10 0 25
Limited by Package RTJC = 5.0 C/W
o
1 0.01
0.1
1
10
30
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
Tc, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
50
100 Ps
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
VGS = 10 V
10
1 ms
100
1
THIS AREA IS LIMITED BY rDS(on)
10 ms 100 ms 1s 10 s DC
10
SINGLE PULSE RTJA = 125 oC/W TA = 25 oC
0.1
SINGLE PULSE TJ = MAX RATED RTJA = 125 C/W TA = 25 oC
o
1
0.01 0.01
0.1
1
10
100
0.5 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
(c)2009 Fairchild Semiconductor Corporation FDMC7692 Rev.B
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FDMC7692 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZTJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE RTJA = 125 C/W
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA
0.001 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
(c)2009 Fairchild Semiconductor Corporation FDMC7692 Rev.B
5
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FDMC7692 N-Channel Power Trench(R) MOSFET
Dimensional Outline and Pad Layout
0.10 C
3.30
A B
2X
3.30
PIN#1 QUADRANT TOP VIEW 0.8 MAX
0.10 C
0.10 C
2X
RECOMMENDED LAND PATTERN
(0.203)
0.08 C
0.05 0.00
SEATING PLANE
SIDE VIEW
PIN #1 IDENT 1
(4X) 0.55 0.45 1.150
2.32 2.22 0.785
4
0.350
R0.150 0.299
2.05 1.95
8
0.65 1.95
5
0.40 (8X) 0.30 0.10 0.05 CAB C
BOTTOM VIEW
A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILE NAME : MLP08XREVA E. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY
(c)2009 Fairchild Semiconductor Corporation FDMC7692 Rev.B
6
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TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM* TM*
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FlashWriter(R)*
FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM Sync-LockTM (R) *
The Power Franchise
(R)
TinyBoostTM TinyBuckTM TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM TRUECURRENTTM* SerDesTM
PDP SPMTM Power-SPMTM
UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM
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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I41
(c) 2008 Fairchild Semiconductor Corporation
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